Growth and field emission of GaN nanowires grown by metal organic chemical vapour deposition

被引：5
|
作者：
Inoue, Y. [1 ]
Tajima, A. [1 ]
Takeda, S. [1 ]
Ishida, A. [1 ]
Mimura, H. [1 ]
Sakakibara, S. [2 ]
机构：
[1] Shizuoka Univ, 3-5-1 Johoku, Hamamatsu, Shizuoka 432, Japan
[2] Yamaha Corp, Iwata, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期
基金：
日本学术振兴会;
关键词：
D O I：
10.1002/pssc.200674775
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Gallium nitride nanowires were grown on Si by Ni-catalyst-assisted metalorganic chemical vapor deposition via a vapor-liquid-solid growth mechanism. The GaN nanowires have a very high growth rate of > 100 mu m/h and a very high aspect ratio of 1000; similar to 20 nm in diameter and -20 mu m in length. In the field emission measurement, the GaN nanowires showed a low turn-on field of 6 V/mu m. The good result is attributed to the near-vertical growth and the very high aspect ratio, as well as a low electron affinity. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2366 / +
页数：2
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