Molecular dynamics analysis of structure and intrinsic stress in amorphous silicon carbide film with deposition process parameters

被引：1
|
作者：
Kim, JY [1 ]
Lee, BW [1 ]
Nam, HS [1 ]
Kwon, D [1 ]
机构：
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Ctr Microstruct Sci Mat, Seoul 151744, South Korea
来源：
DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2 | 2004年 / 449-4卷
关键词：
amorphous silicon carbide; molecular dynamics simulations; substrate temperature; incident energy;
D O I：
10.4028/www.scientific.net/MSF.449-452.97
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.
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页码：97 / 100
页数：4
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