Molecular dynamics analysis of structure and intrinsic stress in amorphous silicon carbide film with deposition process parameters

被引：1

作者：

Kim, JY ^{[1
]}

Lee, BW ^{[1
]}

Nam, HS ^{[1
]}

Kwon, D ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Ctr Microstruct Sci Mat, Seoul 151744, South Korea

来源：

DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2 | 2004年 / 449-4卷

关键词：

amorphous silicon carbide; molecular dynamics simulations; substrate temperature; incident energy;

D O I：

10.4028/www.scientific.net/MSF.449-452.97

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.

引用

页码：97 / 100

页数：4

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