Low-temperature full wafer adhesive bonding

被引：178
|
作者：
Niklaus, F [1 ]
Enoksson, P [1 ]
Kälvesten, E [1 ]
Stemme, G [1 ]
机构：
[1] Royal Inst Technol, Dept Signals Sensors & Syst, S-10044 Stockholm, Sweden
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2001年 / 11卷 / 02期
关键词：
D O I：
10.1088/0960-1317/11/2/303
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have systematically investigated the influence of different bonding parameters on void formation in a low-temperature adhesive bonding process. As a result of these studies we present guidelines for void free adhesive bonding of 10 cm diameter wafers. We have focused on polymer coatings with layer thicknesses between 1 mum and 18 mum. The tested polymer materials were benzocyclobutene (BCE) from Dow Chemical, a negative photoresist (ULTRA-i 300) and a positive photoresist (S1818) from Shipley, a polyimide (HTR3) from Arch Chemical and two different polyimides (PI2555 and PI2610) from DuPont. The polymer material, the banding pressure and the pre-curing time and temperature for the polymer significantly influence void formation at the bond interface. High bonding pressure and optimum pre-curing times/temperatures counteract void formation. We present the process parameters to achieve void-free bonding with the BCB coating and with the ULTRA-i 300 photoresist coating as adhesive materials. Excellent void-free and strong bonds have been achieved by using BCB as the bonding material which requires a minimum bonding temperature of 180 degreesC.
引用
收藏
页码：100 / 107
页数：8
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