Experimental demonstration of the forward biased safe operation area of the emitter turn-off thyristor

被引：0
|
作者：
Xu, ZX [1 ]
Bai, YM [1 ]
Li, YX [1 ]
Huang, AQ [1 ]
机构：
[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
来源：
APEC 2001: SIXTEENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1 AND 2 | 2001年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Emitter Turn-Off (ETO) thyristor is a new type of MOS-controlled thyristor that has a wide reverse-biased safe operation area (RBSOA) due to its unity-gain turn-off capability. Because of the negative feedback provided by the emitter MOSFET, the ETO also has current saturation capability. The forward biased safe operation area (FBSOA) of a small ETO is experimentally demonstrated. The results show that the small ETO has excellent current saturation capability that can be used to control the turn-on di/dt. Issues related to realizing a large area ETO's FBSOA are discussed.
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页码：1225 / 1231
页数：7
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