New liquid precursors for chemical vapor deposition

被引:0
|
作者
Gordon, RG [1 ]
Chen, F [1 ]
Diceglie, NJ [1 ]
Kenigsberg, A [1 ]
Liu, X [1 ]
Teff, DJ [1 ]
Thornton, J [1 ]
机构
[1] Harvard Univ, Chem Labs, Cambridge, MA 02138 USA
关键词
D O I
暂无
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
New precursors have been found for chemical vapor deposition (CVD) of many metal oxides. Each precursor is a mixture formed by randomly attaching a selected set of organic groups, such as the isomers of the butyl group, to a metal 2,4-pentanedionate (also known as acetylacetonate) in place of the methyl groups of the 2,4-pentanedionate ligand. Most of these new mixed metal beta-diketonates are liquids at room temperature, whereas the corresponding metal 2,4-pentanedionates are solids. In the cases where they were solids or viscous liquids, small amounts of organic solvents were added to reduce the viscosity. We have so far prepared mixed beta-diketonate precursors for barium, strontium, calcium, magnesium, aluminum, indium, tin, lead, bismuth, titanium, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, manganese, iron, ruthenium, cobalt, nickel, copper, zinc, yttrium, lanthanum and cerium. Liquid sources are much more convenient for CVD than solid sources. These liquid mixtures or solutions were vaporized by ultrasonically nebulizing the liquid into a flow of hot nitrogen carrier gas preheated to 150-250 degrees C. These vapor mixtures were mixed with air or oxygen and flowed over substrates heated typically to 350-450 degrees C. Films of the corresponding metal oxide (or carbonate, in the case of barium, strontium and calcium) were deposited on substrates of silicon or glass. Gas pressures from 20-760 Torr were used. Because a common set of ligands is used for each of these metal precursors, they can be mixed as liquids or vapors without any precipitation due to ligand exchange reactions. To demonstrate their use in forming mixed metal oxides, we have prepared films of ferroelectric barium titanate. This method should be applicable to other mixed metal oxides of current interest, such as high dielectric constant strontium titanate, ferroelectric bismuth strontium tantalate, superconducting yttrium barium copper oxide, refractory yttrium zirconium oxide, second-harmonic generating barium berate, metallic lanthanum strontium cobalt oxide and magnetoresistive lanthanum strontium manganate.
引用
收藏
页码:63 / 68
页数:6
相关论文
共 50 条
  • [21] Metal-organic precursors and chemical vapor deposition
    Valade, L
    Teyssandier, F
    ACTUALITE CHIMIQUE, 1999, (02): : 14 - 21
  • [22] GC/MS analyses of chemical vapor deposition precursors
    Bartram, ME
    ANALYTICAL CHEMISTRY, 2001, 73 (19) : 534A - 539A
  • [23] Precursors for deposition of strontium bismuth tantalate films by direct liquid injection-metallorganic chemical vapor deposition
    Kang, SW
    Yang, KJ
    Yong, KJ
    Rhee, SW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (01) : C44 - C49
  • [24] CHEMICAL VAPOR-DEPOSITION PRECURSORS FOR METAL SILICIDES
    MADAR, R
    THOMAS, N
    BERNARD, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 17 (1-3): : 118 - 125
  • [25] TUNGSTEN DEPOSITION BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION WITH ORGANOTUNGSTEN PRECURSORS
    SPEE, CIMA
    VERBEEK, F
    KRAAIJKAMP, JG
    LINDEN, JL
    RUTTEN, T
    DELHAYE, H
    VANDERZOUWEN, EA
    MEINEMA, HA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 17 (1-3): : 108 - 111
  • [26] Use of Liquid Precursors for Diamond Chemical Vapor Deposition--The Effects of Mass Transport and Oxygen
    Marcus Asmann
    Joachim Heberlein
    Emil Pfender
    Plasma Chemistry and Plasma Processing, 2000, 20 : 209 - 224
  • [27] Volatile liquid precursors for the chemical vapor deposition (CVD) of thin films containing alkali metals
    Broomhall-Dillard, Randy N.R., 2000, Materials Research Society, Warrendale, PA, United States (606):
  • [28] Allyl(β-diketonato)palladium(II) complexes, including liquid precursors, for chemical vapor deposition of palladium
    Zhang, YP
    Yuan, Z
    Puddephatt, RJ
    CHEMISTRY OF MATERIALS, 1998, 10 (08) : 2293 - 2300
  • [29] Volatile liquid precursors for the chemical vapor deposition (CVD) of thin films containing alkali metals
    Broomhall-Dillard, RNR
    Gordon, RG
    Wagner, VA
    CHEMICAL PROCESSING OF DIELECTRICS, INSULATORS AND ELECTRONIC CERAMICS, 2000, 606 : 139 - 145
  • [30] New precursors for the low temperature chemical vapor deposition of titanium nitride films.
    McKarns, PJ
    Lewkebandara, TS
    Winter, CH
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1998, 215 : U799 - U799