The stark effect and electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots

被引：0

作者：

Skolnick, MS ^{[1
]}

Fry, PW ^{[1
]}

Itskevich, IE ^{[1
]}

Mowbray, DJ ^{[1
]}

Barker, JA ^{[1
]}

O'Reilly, EP ^{[1
]}

Hopkinson, M ^{[1
]}

Al-Khafaji, M ^{[1
]}

Cullis, AG ^{[1
]}

Hill, C ^{[1
]}

Clark, JC ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys, Sheffield S3 7RH, S Yorkshire, England

来源：

OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES | 2000年 / 81卷

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

New information on the electron-hole wavefunctions in InAs-GaAs self-assembled quantum dots is obtained from study of the quantum confined Stark effect. From the sign of asymmetry observed in the Stark effect, it is deduced that the dots have a permanent dipole moment directed from base to apex, implying that holes are localised above the electrons in the dots. This highly unexpected electron-hole alignment is opposite to that predicted by all previous theories. We explain our results by comparison with strain/electronic structure modelling, and are able to deduce that the nominally InAs dots contain significant amounts of gallium, and have a strongly truncated shape. In the light of these results most if not all previous modelling of the electronic structure of InAs self-assembled quantum dots needs to be re-examined. The mechanisms involved in the photocurrent process employed to observe the Stark effect, and the significance of photocurrent techniques to measure absorption spectra in quantum dots are discussed.

引用

页码：337 / 346

页数：10

共 50 条

[21] Dynamic quantum-confined stark effect in self-assembled InAs quantum dots
Gurioli, M
Sanguinetti, S
Henini, M
APPLIED PHYSICS LETTERS, 2001, 78 (07) : 931 - 933
[22] AlGaAs capping effect on InAs quantum dots self-assembled on GaAs
Song, H. Z.
Tanaka, Y.
Yamamoto, T.
Yokoyama, N.
Sugawara, M.
Arakawa, Y.
PHYSICS LETTERS A, 2011, 375 (40) : 3517 - 3520
[23] Hole and electron wave functions in self-assembled InAs quantum dots: a comparison
Reuter, D.
Kailuweit, P.
Roescu, R.
Wieck, A. D.
Wibbelhoff, O. S.
Lorke, A.
Zeitler, U.
Maan, J. C.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (15): : 3942 - 3945
[24] Electron dephasing of a GaAs/AlGaAs quantum well with self-assembled InAs dots
Li, L.
Wang, J.
Kim, Gil-Ho
Ritchie, D. A.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (38)
[25] Self-assembled InAs-GaAs quantum-dot intersubband detectors
Phillips, J
Bhattacharya, P
Kennerly, SW
Beekman, DW
Dutta, M
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (06) : 936 - 943
[26] ELECTRON AND HOLE ENERGY-LEVELS IN INAS SELF-ASSEMBLED QUANTUM DOTS
MEDEIROSRIBEIRO, G
LEONARD, D
PETROFF, PM
APPLIED PHYSICS LETTERS, 1995, 66 (14) : 1767 - 1769
[27] Anomalous quantum-confined Stark effects in stacked InAs/GaAs self-assembled quantum dots
Sheng, WD
Leburton, JP
PHYSICAL REVIEW LETTERS, 2002, 88 (16) : 4 - 167401
[28] Anomalous quantum confined Stark effects in vertically coupled InAs/GaAs self-assembled quantum dots
Sheng, WD
Leburton, JP
COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 513 - 518
[29] 2D-3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dots
Sheng, WD
Leburton, JP
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 50 - 55
[30] Quantum-confined Stark effect and built-in dipole moment in self-assembled InAs/GaAs quantum dots
Jin, P
Li, CM
Zhang, ZY
Liu, FQ
Chen, YH
Ye, XL
Xu, B
Wang, ZG
APPLIED PHYSICS LETTERS, 2004, 85 (14) : 2791 - 2793

← 1 2 3 4 5 →