Magnetic field tuning of hot electron resonant capture in a semiconductor device

被引：3

作者：

Spasov, S.

Allison, G.

Patane, A. ^{[1
]}

Ignatov, A.

Eaves, L.

Maude, D. K.

Hopkinson, M.

Airey, R.

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble, France

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S3 3JD, S Yorkshire, England

[4] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 14期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2794407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study hot-electron capture on resonant N-impurities in the dilute nitride Ga(AsN) alloy under high magnetic fields up to 23 T. We show that when the ratio of electric and magnetic fields reaches a critical value, the trajectory of conduction electrons becomes fully localized in real space; this leads to a negative differential conductance and current instabilities tuneable by magnetic field. (C) 2007 American Institute of Physics.

引用

页数：3

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