AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain

AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain was proposed and fabricated using Al2O3 gate oxide deposited on the fully recessed gate region. The proposed normally-off Al2O3/GaN MOSFET utilized AlGaN/GaN heterostructure source and drain with extremely high 2DEG density of 1.87x10(14) cm(2) with mobility of 120 cm(2)V(-1)s(-1) and the device results were compared to those obtained from the reference device with normal AlGaN/GaN heterostructure source and drain with 2DEG density of 1.33x10(13) cm(2) and mobility of 1070 cm(2)V(-1)s(-1). The maximum drain current and maximum transconductance of the proposed device were 263 mA/mm and 72 mS/mm, respectively, about 7.3-times and 5-times larger than those of the reference device, which are comparable to or even higher than one of the best results obtained from various GaN MOSFETs reported by others. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim