Minimization of topological defects in ion-induced ripple patterns on silicon

被引：35

作者：

Keller, Adrian ^{[1
]}

Facsko, Stefan ^{[1
]}

Moeller, Wolfhard ^{[1
]}

机构：

[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

NEW JOURNAL OF PHYSICS | 2008年 / 10卷

关键词：

D O I：

10.1088/1367-2630/10/6/063004

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The evolution of self-organized nanoscale ripple patterns induced by low-energy ion sputtering of silicon is investigated. The quality of the patterns is monitored by calculating a normalized density of topological defects from atomic force microscopy images. A strong dependence of the normalized defect density on the applied ion fluence is observed with a well-pronounced minimum at intermediate fluences. Simulations using the damped Kuramoto-Sivashinsky equation yield good agreement with the experiments and are further used to study the dynamics of single pattern defects.

引用

页数：9

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