Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD

Epitaxial SnO2 films were deposited on MgF2 (110) substrates at different substrate temperatures by the metal organic chemical vapor deposition (MOCVD) method. The structural, optical and electrical properties as well as elementary composition were studied in detail. The obtained films were all rutile phase SnO2 grown along the [110] direction. The SnO2 film prepared at 660 degrees C was single crystalline epitaxial film. The epitaxial relationships were clearly determined as SnO2 (110) 11 MgF2 (110) with SnO2 [001] parallel to MgF2 [001]. The Hall mobility of the 660 degrees C-deposited film was 21 cm(2) V-1 s(-1) with a carrier concentration of 3.9 x 10(17) cm(-3). The average transmittance of the 660 degrees C-deposited film in the visible range is 93% and the optical band gap is estimated as 3.89 eV.