Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD

被引：11
|
作者：
He, Linan [1 ]
Cao, Qiong [1 ]
Feng, Xianjin [1 ]
Luan, Caina [1 ]
Wang, Weiguang [1 ]
Zhao, Wei [1 ]
Ma, Jin [1 ]
机构：
[1] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2018年 / 44卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Films; Epitaxial growth; SnO2; TIN OXIDE-FILMS; THIN-FILM; SAPPHIRE; TRANSISTOR; TEMPERATURE; LAYER;
D O I：
10.1016/j.ceramint.2017.10.013
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Epitaxial SnO2 films were deposited on MgF2 (110) substrates at different substrate temperatures by the metal organic chemical vapor deposition (MOCVD) method. The structural, optical and electrical properties as well as elementary composition were studied in detail. The obtained films were all rutile phase SnO2 grown along the [110] direction. The SnO2 film prepared at 660 degrees C was single crystalline epitaxial film. The epitaxial relationships were clearly determined as SnO2 (110) 11 MgF2 (110) with SnO2 [001] parallel to MgF2 [001]. The Hall mobility of the 660 degrees C-deposited film was 21 cm(2) V-1 s(-1) with a carrier concentration of 3.9 x 10(17) cm(-3). The average transmittance of the 660 degrees C-deposited film in the visible range is 93% and the optical band gap is estimated as 3.89 eV.
引用
收藏
页码：869 / 873
页数：5
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