2.45GHz Wide Input Range CMOS Rectifier for RF Energy Harvesting

被引:0
|
作者
Lau, Wendy W. Y. [1 ]
Siek, Liter [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Excellence IC Design VIRTUS, Singapore, Singapore
关键词
Energy harvesting; rectifiers; RF-DC converters; ultra high frequency (UHF); wireless power transfer (WPT);
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper presents a CMOS rectifier operating at 2.45 GHz for RF energy harvesting. The diode forward voltage drop, forward peak current and reverse leakage current issues have been addressed by utilizing a novel DC-boosted biasing technique. The proposed rectifier is implemented in 65 nm 6M/1P standard CMOS technology. In simulation, the proposed rectifier achieved peak efficiency of 59.6% with input power of 12 dBm at 2.45 GHz and 29 k Omega output load. PCE greater than 20% can be achieved over an extended input power range of 19 dB from -18 dBm to 1 dBm. The proposed rectifier has sensitivity of -17 dBm for 1 V output voltage.
引用
收藏
页数:4
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