Growth and oxidation of ultra-thin Al films on the Re(0001) surface

被引：59
|
作者：
Wu, YT
Garfunkel, E
Madey, TE
机构：
[1] RUTGERS STATE UNIV,DEPT CHEM,PISCATAWAY,NJ 08855
[2] RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08855
[3] RUTGERS STATE UNIV,SURFACE MODIFICAT LAB,PISCATAWAY,NJ 08855
来源：
SURFACE SCIENCE | 1996年 / 365卷 / 02期
关键词：
aluminium; aluminium oxide; insulating films; low energy ion scattering (LEIS); metal-insulator interfaces; X-ray photoelectron spectroscopy;
D O I：
10.1016/0039-6028(96)00699-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth and oxidation of ultra-thin Al films on the Re (0001) surface are studied by X-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS) and high resolution electron energy loss spectroscopy (HREELS). The first monolayer of Al grows in a two-dimensional fashion and almost completely covers the Re(0001) substrate at 300 K. Al films of thickness <15 Angstrom are oxidized by annealing to 970 K in 1 x 10(-4) Torr oxygen to form stoichiometric aluminium oxide films. LEIS results show that the oxide films formed at 970 K cover the substrate completely. Hexagonal LEED patterns are observed from the aluminium oxide films, consistent with ordered structures similar to those of crystalline alpha- or gamma-Al2O3. The XPS Al 2s and O 1s binding energies of the aluminium oxide films increase as a function of the film thickness; this thickness-dependent shift may be related to Schottky barrier formation at the Al2O3/Re interface.
引用
收藏
页码：337 / 352
页数：16
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