Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing

Near-infrared stimulated emission (SE) from InGaN layers grown by plasma-assisted molecular beam epitaxy has been studied, and the influence of the growth temperature (T (gr)) on the SE threshold has been revealed. The obtained experimental data strongly suggest a two-layer model for the grown InGaN structure with a thin defect-rich interface layer and a relatively pure InGaN bulk responsible for light emission. For the latter, the crystalline quality appears to be unaffected by the growth temperature, at least in terms of free electron concentration, which is supported by the similar spontaneous luminescence intensities measured throughout the entire T (gr) range of 430 degrees C-510 degrees C. However, the quality of the interface layer improves with increasing T (gr), leading to a decrease in the SE threshold down to similar to 10 kW cm(-2) at T = 77 K for the samples grown at T (gr) = 470 degrees C-480 degrees C. For the higher growth temperatures (T (gr) >= 490 degrees C), the SE threshold increases rapidly with T (gr), apparently related to the strong waveguide losses due to the increasing surface roughness of the InGaN layer, and SE vanishes completely at T (gr) = 510 degrees C, further suppressed by the partial phase separation of the InGaN alloy.