Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

被引：18
|
作者：
Motayed, Abhishek [1 ]
Krylyuk, Sergiy [1 ]
Davydov, Albert V. [1 ]
机构：
[1] Natl Inst Stand & Technol, Mat Measurement Lab, Gaithersburg, MD 20899 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 11期
关键词：
D O I：
10.1063/1.3637049
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have used low-frequency noise (LFN) spectroscopy to characterize generation-recombination (G-R) centers in silicon nanowires grown using chemical vapor deposition. The LFN spectra showed Lorentzian behavior with well-defined corner-frequency indicative of single G-R center in the bandgap. From the temperature-dependent LFN measurement a single deep level at 0.39 eV from the bandedge is identified, which matches closely with the Au donor level in Si. The trap concentration was estimated at 2.0 x 10(12) cm(-3) with electron and hole capture cross-sections of 9.5 x 10(-17) cm(2) and 1.4 x 10(-16) cm(2), respectively. This study demonstrates the potential of the LFN spectroscopy in characterization of deep-levels in nanowires. (C) 2011 American Institute of Physics. [doi:10.1063/1.3637049]
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页数：3
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