Modeling the effective capacitance of interconnect loads for predicting CMOS gate slew

被引:5
|
作者
Huang, ZC [1 ]
Kurokawa, A
Pan, J
Inoue, Y
机构
[1] Waseda Univ, Grad Sch Informat Prod & Syst, Kitakyushu, Fukuoka 8080135, Japan
[2] Semicond Technol Acad Res Ctr, Yokohama, Kanagawa 2220033, Japan
关键词
static timing analysis; gate slew; CMOS inverter; effective capacitance; interconnect loads;
D O I
10.1093/ietfec/e88-a.12.3367
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In deep submicron designs, predicting gate stews and delays for interconnect loads is vitally important for Static Timing Analysis (STA). The effective capacitance C-eff concept is usually used to calculate the gate delay of interconnect loads. Many C-eff algorithms have been proposed to compute gate delay of interconnect loads. However, less work has been done to develop a C-eff algorithm which can accurately predict gate slew. In this paper, we propose a novel method for calculating the C-eff of interconnect load for gate slew. We firstly establish a new expression for C-eff in 0.8Vdd point. Then the Integration Approximation method is used to calculate the value of C-eff in 0.8Vdd point. In this method, the integration of a complicated nonlinear gate output is approximated with that of a piecewise linear waveform. Based on the value of C-eff in 0.8Vdd point, C-eff of interconnect load for gate slew is obtained. The simulation results demonstrate a significant improvement in accuracy.
引用
收藏
页码:3367 / 3374
页数:8
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