Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

被引：403

作者：

Liu, Leitao ^{[1
]}

Kumar, S. Bala ^{[1
]}

Ouyang, Yijian ^{[1
]}

Guo, Jing ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, NEB 551, Gainesville, FL 32611 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 09期

关键词：

Ab initio theory; ballistic transport; band structure calculation; new direct-gap semiconductor; 2-D transition metal dichalcogenide (MX2); MOS2;

D O I：

10.1109/TED.2011.2159221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance limits of monolayer transition metal dichalcogenide (MX2) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX2. We find the lattice structures of monolayer MX2 remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2 transistors are better compared with those of the silicon transistors if a thin high-kappa gate insulator is used. This makes monolayer MX2 promising 2-D materials for future nanoelectronic device applications.

引用

页码：3042 / 3047

页数：6

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