Fast chaos with slow p-n junction diodes

被引：1
|
作者：
Mykolaitis, G. [1 ,2 ]
Miskinis, R. [1 ]
Bumeliene, S. [1 ]
Tamaseviciute, E. [1 ,3 ]
Tamasevicius, A. [1 ]
机构：
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
[2] Vilnius Gediminas Tech Univ, Dept Phys, LT-10223 Vilnius, Lithuania
[3] Vilnius State Univ, Dept Radiophys, LT-10222 Vilnius, Lithuania
来源：
ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 03期
关键词：
D O I：
10.12693/APhysPolA.113.971
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate both experimentally and numerically that slow recovery p-n junction diodes can be exploited to generate chaos at high megahertz frequencies. An extremely simple resonator consisting of an inductor in parallel with a diode when externally periodically driven exhibits chaotic response.
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页码：971 / 974
页数：4
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