Liquid injection MOCVD of zirconium dioxide using a novel mixed ligand zirconium precursor

被引：1

作者：

Jones, AC

Leedham, TJ

Wright, PJ

Crosbie, MJ

Wiliams, DJ

Fleeting, KA

Davies, HO

Otway, DJ

O'Brien, P

机构：

[1] Inorgtech Ltd, Mildenhall IP28 7DE, Suffolk, England

[2] Def Evaluat & Res Agcy, Malvern WR14 3PS, Worcs, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2BP, England

来源：

CHEMICAL VAPOR DEPOSITION | 1998年 / 4卷 / 05期

关键词：

MOCVD; zirconium dioxide; thin films; novel zirconium precursors;

D O I：

10.1002/(SICI)1521-3862(199810)04:05<197::AID-CVDE197>3.3.CO;2-U

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin films of ZrO2 have been deposited by liquid injection MOCVD using tetrahydrofuran solutions of the novel mixed ligand precursor Zr-2((OPr)-Pr-i)(6)(thd)(2) (thd = 2,2,6,6,-tetramethyl-3,5-heptanedionate) Oxide growth was observed over an unusually wide range of temperatures from 250 degrees C to at least 600 degrees C. Optimized growth of ZrO2 occurred between 350 degrees C and 550 degrees C, which is considerably lower than the optimum temperature for deposition from the conventional Zr(thd)(4) precursor. Analysis of the films by Auger electron spectroscopy showed that carbon was present at levels of between similar to 2 at.-% and 11 at.-%, depending on substrate temperature and oxygen concentration in the gas phase.

引用

页码：197 / 201

页数：5

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