Effect of structure development on self-trapped exciton emission of TiO2 thin films

被引:3
|
作者
Sildos, I [1 ]
Suisalu, A [1 ]
Kiisk, V [1 ]
Schuisky, M [1 ]
Mändar, H [1 ]
Uustare, T [1 ]
Aarik, J [1 ]
机构
[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia
关键词
thin film; anatase; self-trapped exciton; epitaxial growth;
D O I
10.1117/12.408489
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photoluminescence of thin crystalline TiO2 films was studied. The films contained an anatase phase and were grown by the atomic layer deposition method on different single crystal substrates. A polarised re-combination emission of self-trapped excitons was observed in the films at 5 K. A comparison of the obtained spectra with those of the single crystal anatase allowed determining crystallite orientations in the films. Results were consistent with the X-ray diffraction and reflection high-energy electron diffraction data.
引用
收藏
页码:427 / 430
页数:4
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