A kinetic model for precipitation of oxygen in silicon

被引：0
|
作者：
Senkader, S
Hobler, G
机构：
来源：
EARLY STAGES OF OXYGEN PRECIPITATION IN SILICON | 1996年 / 17卷
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D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
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页码：447 / 454
页数：8
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