Nanocrystalline indium oxide-doped tin oxide thin film as low temperature hydrogen sensor

被引:185
|
作者
Shukla, S
Seal, S
Ludwig, L
Parish, C
机构
[1] Univ Cent Florida, Dept Mech Mat Aerosp Engn, Orlando, FL 32816 USA
[2] Univ Cent Florida, AMPAC, Orlando, FL 32816 USA
[3] NASA, Kennedy Space Ctr, Titusville, FL USA
基金
美国国家航空航天局; 美国国家科学基金会;
关键词
nanocrystalline indium oxide-doped tin oxide; Pt-sputtered thin film; low temperature hydrogen sensor;
D O I
10.1016/j.snb.2003.08.025
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Hydrogen gas, within the concentration range of 100 ppm-4 vol.%, is successfully sensed at lower operating temperatures, 25 and 50degreesC, using the Pt-sputtered sol-gel dip-coated nanocrystalline (6-7 nm) 6.5 mol% In2O3-doped SnO2 semiconductor thin (100-150 nm) film sensor. Typically, for 1000 ppm of hydrogen, the maximum sensitivity values of 32 and 1600% are observed at 25 and 50degreesC, respectively; while for 2 vol.% hydrogen, the maximum sensitivity values of 50 and 70,000% are recorded at 25 and 50degreesC, respectively. At 25degreesC, for 4 vol.% (explosive limit as set by NASA) hydrogen, the maximum hydrogen gas sensitivity values of 107,887 and 2083% are observed for the Pt-sputtered thin films calcined at 500 and 600degreesC, respectively. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:256 / 265
页数:10
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