Optimal design and photoelectric performance study of micro-lens light trapping structure for CIGS thin film solar cell in BIPV

被引:9
|
作者
Zhu, Li [1 ,2 ]
Zhang, Jiqiang [1 ]
Wang, Di [3 ]
Wang, Ruohong [1 ]
Sun, Yong [1 ,2 ]
Wu, Cuigu [4 ]
机构
[1] Tianjin Univ, Sch Architecture, Tianjin 300072, Peoples R China
[2] Tianjin Univ, APEC Sustainable Energy Ctr, Tianjin 300072, Peoples R China
[3] Tianjin Univ, Tianjin Int Engn Inst, Tianjin 300072, Peoples R China
[4] Hebei Phoenix Valley Zero Carbon Dev Res Inst, Baoding 071000, Hebei, Peoples R China
关键词
BIPV; CIGS Thin film solar cell; Micro-lens light trapping structure; Photoelectric performance; ARRAY; MODULES;
D O I
10.1016/j.renene.2021.06.036
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
In this paper, an optimal design method of micro-lens light trapping structure for thin film solar cells applied to building integrated photovoltaic (BIPV) is proposed. Under three common scenes of BIPV, including lighting roof, sunshade and building facade, the optimal design and photoelectric performance study of Copper Indium Gallium Selenium (CIGS) thin film solar cells with micro-lens light trapping structure are studied. Among the three kinds of micro-lens light trapping structures, V-shaped, semi-cylindrical and concave, the light capture performance of V-shaped micro-lens light trapping structure is the best. The V-shaped micro-lens light trapping structure with a vertex angle of 70 degrees and a groove depth of 100 um has the best light capture performance in lighting roof and sunshade scene, which can increase the annual radiation flux of the absorption layer incident surface by 4.45% and 2.84% respectively. The V-shaped micro-lens light trapping structure with a vertex angle of 60 degrees and a groove depth of 200 mu m has the best light capture performance in building facade scene, which can increase the annual radiation flux of the absorption layer incident surface by 7.63%. When the light source is vertically incident, these two V-shaped micro-lens light trapping structures can increase the short-circuit current density by 15.57% and 7.11% respectively. (C) 2021 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1356 / 1371
页数:16
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