Influence of liquid environments on femtosecond laser ablation of silicon

被引:85
|
作者
Liu, Hewei [1 ,2 ]
Chen, Feng [1 ,2 ]
Wang, Xianhua [1 ,2 ]
Yang, Qing [3 ]
Bian, Hao [1 ,2 ]
Si, Jinhai [1 ,2 ]
Hou, Xun [1 ,2 ]
机构
[1] Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Shaanxi Key Lab Photon Technol Informat, Xian 710049, Peoples R China
[3] Xi An Jiao Tong Univ, State Key Lab Mfg Syst Engn, Xian 710049, Peoples R China
基金
美国国家科学基金会;
关键词
Femtosecond laser; Laser ablation; Scanning electron microscopy; Silicon; Liquids; Confocal microscopy; OPTICAL-BREAKDOWN; WATER; PULSES; NANOPARTICLES; GENERATION; SURFACE; NANOSTRUCTURES; FABRICATION; NANOSECOND; PICOSECOND;
D O I
10.1016/j.tsf.2010.04.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Liquid-assisted ablation of solids by femtosecond laser pulses has proved to be an efficient tool for highly precise microfabrication, which evokes numerous research interests in recent years. In this paper, we systematically investigate the interaction of femtosecond laser pulses with silicon wafer in water, alcohol, and as a comparison, in air. After producing a series of multiple-shot craters on a silicon wafer in the three types of environments, surface morphologies and femtosecond laser-induced periodic surface structures are comparatively studied via the scanning electron microscope investigations. Meanwhile, the influence of liquid mediums on ablation threshold fluence and ablation depth is also numerically analyzed. The experimental results indicate that the ablation threshold fluences of silicon are reduced by the presence of liquids (water/alcohol) and ablation depths of craters are deepened in ambient water. Furthermore, smoother surfaces tend to be obtained in alcohol-mediated ablation at smaller shot numbers. Finally, the evolution of the femtosecond laser-induced periodic surface structures in air, water and alcohol is also discussed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:5188 / 5194
页数:7
相关论文
共 50 条
  • [21] Effects of Parameters in Femtosecond Laser Micromachining on Ablation of Silicon
    陈治
    傅星
    耿娜
    胡小唐
    Transactions of Tianjin University, 2009, 15 (03) : 225 - 228
  • [22] Effects of plasma confinement on the femtosecond laser ablation of silicon
    Zhang, Chengyun
    Yao, Jianwu
    Lan, Sheng
    Trofimov, Vyacheslav A.
    Lysak, Tatiana M.
    OPTICS COMMUNICATIONS, 2013, 308 : 54 - 63
  • [23] Laser ablation of silicon with THz bursts of femtosecond pulses
    Gaudiuso, Caterina
    Terekhin, Pavel N.
    Volpe, Annalisa
    Nolte, Stefan
    Rethfeld, Baerbel
    Ancona, Antonio
    SCIENTIFIC REPORTS, 2021, 11 (01) : 13321
  • [24] Femtosecond laser ablation of silicon wafers in air and water
    Wang Rui
    Yang Jian-Jun
    Liang Chun-Yong
    Wang Hong-Shui
    Han Wei
    Yang Yang
    ACTA PHYSICA SINICA, 2009, 58 (08) : 5429 - 5435
  • [25] Laser ablation of silicon with THz bursts of femtosecond pulses
    Caterina Gaudiuso
    Pavel N. Terekhin
    Annalisa Volpe
    Stefan Nolte
    Bärbel Rethfeld
    Antonio Ancona
    Scientific Reports, 11
  • [26] Effects of Parameters in Femtosecond Laser Micromachining on Ablation of Silicon
    陈治
    傅星
    耿娜
    胡小唐
    Transactions of Tianjin University, 2009, (03) : 225 - 228
  • [27] Laser ablation of silicon in water with nanosecond and femtosecond pulses
    Ren, J
    Kelly, M
    Hesselink, L
    OPTICS LETTERS, 2005, 30 (13) : 1740 - 1742
  • [28] Femtosecond laser ablation of silicon–modification thresholds and morphology
    J. Bonse
    S. Baudach
    J. Krüger
    W. Kautek
    M. Lenzner
    Applied Physics A, 2002, 74 : 19 - 25
  • [29] Thermal melting and ablation of silicon by femtosecond laser radiation
    A. A. Ionin
    S. I. Kudryashov
    L. V. Seleznev
    D. V. Sinitsyn
    A. F. Bunkin
    V. N. Lednev
    S. M. Pershin
    Journal of Experimental and Theoretical Physics, 2013, 116 : 347 - 362
  • [30] Effects of parameters in femtosecond laser micromachining on ablation of silicon
    Chen Z.
    Fu X.
    Geng N.
    Hu X.
    Transactions of Tianjin University, 2009, 15 (03) : 225 - 228