THERMAL IMPACTS OF LEAKAGE POWER IN 2D/3D FLOORPLANNING

被引:0
|
作者
Ma, Yuchun [1 ]
Zhou, Qiang [1 ]
Zhou, Pingqiang [1 ]
Hong, Xianlong [1 ]
机构
[1] Tsinghua Univ, Dept Comp Sci & Technol, Tsinghua Natl Lab Informat Sci & Technol TNList, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
3D ICs; thermal; leakage power; floorplanning;
D O I
10.1142/S0218126610006773
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Leakage power is becoming a key design challenge in current and future CMOS designs. Due to technology scaling, the leakage power is rising so quickly that it largely elevates the die temperature. In this paper, we deeply investigate the impact of leakage power on thermal profile in both 2D and 3D floorplanning. Our results show that chip temperature can increase by about 11 degrees C in 2D design and 68 degrees C for 3D case with leakage power considered. Then we propose a thermal-driven floorplanning flow integrated with an iterative leakage-aware thermal analysis process to optimize chip temperature and save leakage power consumption. Experimental results show that for 2D design, the max chip temperature can be reduced by about 8 degrees C and the proportion of leakage power to total power can be reduced from 19.17% to 11.12%. The corresponding results for 3D are 60 degrees C temperature reduction and 16.3% less leakage power proportion.
引用
收藏
页码:1483 / 1495
页数:13
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