CoFeB/MgO-based magnetic tunnel junctions for film-type strain gauge

被引：6
|
作者：
Saito, K. [1 ]
Imai, A. [1 ]
Ota, S. [1 ,2 ]
Koyama, T. [1 ,3 ]
Ando, A. [1 ]
Chiba, D. [1 ,3 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, SANKEN, Ibaraki, Osaka 5670047, Japan
[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
[3] Osaka Univ, Ctr Spintron Res Network Osaka, Toyonaka, Osaka 5608531, Japan
来源：
APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 07期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1063/5.0085272
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We show that a CoFeB/MgO-based magnetic tunnel junction (MTJ) formed directly on a flexible substrate has considerable potential as a high-sensitivity strain gauge. A gauge factor of & SIM;1000, which represents the highest sensitivity reported, thus far, for a film-type strain gauge and is & SIM;500 times larger than that of the most prevalent metal-foil strain gauge, is realized in the flexible MTJ with a pseudo-spin valve structure under the condition of external magnetic-field assistance. Additionally, using a flexible MTJ with strain-insensitive exchange-biased pinned and strain-sensitive free layers, we demonstrate that a large resistance change due to the strain application can be achieved under magnetic field-free conditions. According to simulations based on the coherent magnetization rotation model, conditions are suggested for improving the gauge factor, as well as for using the flexible MTJ as a strain gauge in practical applications.
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页数：5
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