Functionalization of Silicon Nanowires for Specific Sensing

被引:4
|
作者
Passi, V. [1 ]
Dubois, E. [2 ]
Celle, C. [3 ]
Clavaguera, S. [3 ]
Simonato, J. -P. [3 ]
Raskin, J. -P. [1 ]
机构
[1] Catholic Univ Louvain, Inst Informat & Commun Technol, Elect & Appl Math, B-1348 Louvain La Neuve, Belgium
[2] Inst Elect Microelect & Nanotechnol, Silicon Microelect Grp, F-59652 Villeneuve Dascq, France
[3] CEA Grenoble, LITEN DTNM LCRE, F-28054 Grenoble 9, France
关键词
LABEL-FREE DETECTION; SURFACE; DNA;
D O I
10.1149/1.3570811
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change of the Si NWs equivalent conductance. The use of the output conductance of a silicon nanowire as a compact transducer for direct detection of (bio)chemical molecules or gases has gained immense attention these last years. In this paper, fabrication of silicon nanowires using top-down approach is shown, with simple calculations to determine hole mobility, hole concentration and resistivity. Transfer characteristics and sampling measurements were performed on the nanowires with and without surface functionalization under various ambient conditions indicating the importance of functionalization in order to avoid any environment effect on the transport properties of the nanowires.
引用
收藏
页码:313 / 318
页数:6
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