Raman Spectroscopy on Surface Phonons of Si(hhk) Surfaces Modified by Au Submonolayers

被引：5
|
作者：
Speiser, Eugen [1 ]
Plaickner, Julian [1 ]
Chandola, Sandhya [1 ]
Esser, Norbert [1 ]
Halbig, Benedikt [2 ]
Geurts, Jean [2 ]
机构：
[1] Leibniz Inst Analyt Wissensch ISAS eV, Dept Interface Analyt, Schwarzschildstr 8, D-12489 Berlin, Germany
[2] Univ Wurzburg, Phys Inst, Expt Phys 3 Am Hubland, D-97074 Wurzburg, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2019年 / 256卷 / 02期
关键词：
phonons; Raman spectra; semiconductor surfaces; INSB/CDTE HETEROSTRUCTURES; INTERFACE QUALITY; CD OVERPRESSURE; AB-INITIO; SEMICONDUCTOR; TRANSITION; SPECTRUM; LAYERS; WIRES;
D O I：
10.1002/pssb.201800341
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Raman spectroscopy has evolved to a sensitive tool for analyzing vibration modes of ordered (sub)monolayers of metal adatoms on semiconductor surfaces, which are typical systems for electron correlation effects. We report on the in situ UHV Raman analysis of self-organized Au submonolayers on nominal Si(111) surfaces, as well as on vicinal Si(553), Si(775), and Si(557). For the two-dimensional Au-(3x3) and the one-dimensional Au-(5 x 2) reconstruction several specific Raman peaks in the spectral range below 200 cm(-1) are assigned to Au-dominated vibration modes, while Si-step-edge vibration modes around 400 cm(-1) are fingerprints of the substrate orientation.
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页数：7
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