Opportunities for employing silicon carbide in high power photo-switches

被引：9
|
作者：
Nunnally, W [1 ]
Mazzola, M [1 ]
机构：
[1] Univ Missouri, Columbia, MO 65211 USA
来源：
PPC-2003: 14TH IEEE INTERNATIONAL PULSED POWER CONFERENCE, VOLS 1 AND 2, DIGEST OF TECHNICAL PAPERS | 2003年
关键词：
D O I：
10.1109/PPC.2003.1277936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High electric field geometries for high power, photoconductive switches made possible by employing sub-bandgap energy photons and inter-bandgap dopants / defects are being investigated for compact pulse power systems. The high field, long absorption depth package reduces the required linear mode, optical closure energy and also reduces the conduction current density through the active material and at the contacts. This paper describes the opportunities for employing semi-insulating SiC wafer in the University of Missouri-Columbia, high electric field configuration. The parameters of semi-insulating SiC materials and methods of fabricating such materials into a high power photo-switch are discussed., In addition, transient modeling of the transverse injection of optical closure energy is discussed.
引用
收藏
页码：823 / 826
页数：4
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