Spectroscopic Characterization of AlGaN Samples Emitting in Deep-UV Region

被引：0
|
作者：
Hannah, M. E. [1 ]
Mishra, K. C. [1 ]
Laski, J. [1 ]
Fareed, Q. [2 ]
Khan, Asif [2 ]
机构：
[1] OSRAM SYLVANIA Inc, Cent Res & Serv Lab, Beverly, MA 01915 USA
[2] Univ South Carolina, Photon & Microelect Lab, Columbia, SC USA
来源：
LUMINESCENCE AND DISPLAY MATERIALS | 2011年 / 33卷 / 33期
关键词：
ALN;
D O I：
10.1149/1.3578023
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have investigated optical and fluorescence properties of two epilayers used in a typical AlGaN based light emitting diode for emission in the deep ultraviolet (UV) region near 260 nm. These two epilayers correspond to one n-type AlGaN: Si layer used as the cladding layer, and a multiple quantum well system configured for emission near 272 nm respectively. The emission and excitation peaks for band edge emission have been thoroughly investigated. A strong temperature dependence of both visible and UV emission has been observed, and a model based on the Arrhenius equation was used to determine the activation energies for the states involved.
引用
收藏
页码：83 / 94
页数：12
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