Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

被引：26
|
作者：
Tiwari, Nidhi [1 ]
Shieh, Han-Ping D.
Liu, Po-Tsun
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
来源：
MATERIALS LETTERS | 2015年 / 151卷
关键词：
Sputtering; Semiconductor; Thin films;
D O I：
10.1016/j.matlet.2015.03.043
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 degrees C reveal smaller sub-threshold swing (SS similar to 0.52 V/dec) and threshold voltage (Vth similar to 1.3 V) than the TFTs (SS similar to 0.82 V/dec, Vth similar to 13.3 V) of a-IGZO thin film annealed at the same temperature. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：53 / 56
页数：4
相关论文
共 50 条
  • [31] Dependence of film thickness on the structural and optical properties of ZnO thin films
    Tuezemen, Ebru Senadim
    Eker, Sitki
    Kavak, Hamide
    Esen, Ramazan
    APPLIED SURFACE SCIENCE, 2009, 255 (12) : 6195 - 6200
  • [32] SHI induced modification of ZnO thin film: Optical and structural studies
    Agarwal, DC
    Kumar, A
    Khan, SA
    Kabiraj, D
    Singh, F
    Tripathi, A
    Pivin, JC
    Chauhan, RS
    Avasthi, DK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 244 (01): : 136 - 140
  • [33] Estimation of contact resistance in four terminal amorphous IGZO thin film transistor
    Firoz, Nadeem
    Singh, Shivam
    Mazhari, B.
    2021 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 2021, : 183 - 186
  • [34] Effects of electrode materials on the performances of IGZO-based thin film transistor
    Deng, Hong (hdeng@uestc.edu.cn), 1600, Editorial Office of Chinese Optics (35):
  • [35] OPTICAL AND ELECTRICAL CHARACTERIZATION OF ZnO THIN FILM
    Khan, Zishan H.
    Islamuddin
    Kumar, Ravi K.
    Salah, Numan
    Habib, Sami
    El-Hamidy, S. M. Abdallah
    Rafat, M.
    Husain, M.
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2010, 9 (05) : 423 - 429
  • [36] Study of ZnO/BST interface for thin-film transistor (TFT) applications
    Kandpal, Kavindra
    Gupta, Navneet
    Singh, Jitendra
    Shekhar, Chandra
    SURFACES AND INTERFACES, 2021, 23
  • [37] SEMIINSULATING POLYSILICON THIN-FILM-TRANSISTOR - A PROPOSED THIN-FILM-TRANSISTOR
    CHOI, K
    MATSUMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (7A): : 3497 - 3499
  • [38] Temperature dependent optical properties of ZnO thin film Check for using ellipsometry and photoluminescence
    Bouzouraa, M. -B.
    Battie, Y.
    Dalmasso, S.
    Zaibi, M. -A.
    Oueslati, M.
    Naciri, A. En
    SUPERLATTICES AND MICROSTRUCTURES, 2018, 117 : 457 - 468
  • [39] Fast PEALD ZnO Thin-Film Transistor Circuits
    Mourey, Devin A.
    Zhao, Dalong A.
    Sun, Jie
    Jackson, Thomas N.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (02) : 530 - 534
  • [40] Atomic layer deposition of ZnO on graphene for thin film transistor
    Liu, Rongsheng
    Peng, Minfang
    Zhang, Haiyan
    Wan, Xun
    Shen, Meie
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 56 : 324 - 328
12345