A study on spin-polarized transport properties in magnetic-electric barrier structures

被引：5
|
作者：
Qin, JH [1 ]
Guo, Y [1 ]
Chen, XY [1 ]
Gu, BL [1 ]
机构：
[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
来源：
ACTA PHYSICA SINICA | 2003年 / 52卷 / 10期
关键词：
magnetic-electric barrier; spin filtering; spintronics; spin polarization;
D O I：
10.7498/aps.52.2569
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigated spin-polarized transport properties for electrons tunneling through a few of magnetic-electric barrier structures. The general formula of the transmission was derived. The relationship between the spin-polarization and the distribution of the nonhomogeneous magnetic field was revealed. Furthermore, our results also indicated that the spin-filtering effect can be enhanced significantly when a semiconductor with a larger g* factor is used.
引用
收藏
页码：2569 / 2575
页数：7
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