Energy dispersive X-ray spectroscopy analysis of Si sidewall surface etched by deep-reactive ion etching

被引：0
|
作者：
Matsutani, Akihiro [1 ]
Nishioka, Kunio [1 ]
Sato, Mina [1 ]
机构：
[1] Tokyo Inst Technol, Tech Dept, Div Microproc Technol Platform, Yokohama, Kanagawa 2268503, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 06期
关键词：
FLUOROCARBON FILMS; MEMS;
D O I：
10.7567/JJAP.55.06GH05
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the composition of a passivation film on a sidewall etched by deep-reactive ion etching (RIE) using SF6/O-2 and C4F8 plasma, by energy-dispersive X-ray (EDX) spectroscopy. It was found that the compositions of carbon and fluorine in the passivation film on the etched sidewall depend on the width and depth of the etched trench. It is important to understand both the plasma behavior and the passivation film composition to carry out fabrication by deep-RIE. We consider that these results of the EDX analysis of an etched sidewall will be useful for understanding plasma behavior in order to optimize the process conditions of deep-RIE. (C) 2016 The Japan Society of Applied Physics
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页数：3
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