Pentacene-based field effect transistors

被引：0

作者：

Mayer, AC ^{[1
]}

Swiggers, ML ^{[1
]}

Johnson, CJ ^{[1
]}

Mack, JL ^{[1
]}

Zhu, ZT ^{[1
]}

Headrick, RL ^{[1
]}

Malliaras, GG ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

THIN FILM TRANSISTOR TECHNOLOGIES VI, PROCEEDINGS | 2003年 / 2002卷 / 23期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The characteristics of pentacene transistors are strongly influenced by the morphology of the pentacene film in the channel as well as in the neighborhood of the source electrode. We discuss the optimization of film growth and show the potential of organic transistors for applications in gas sensing.

引用

页码：288 / 291

页数：4

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