Effect of Heating Duration on the Synthesis of Silicon Carbide Nanotubes by Microwave Heating of MWCNTs and Silica

被引:0
|
作者
Sung, Tony Voo Chung [1 ]
Hong, Voon Chun [1 ]
Chuan, Lee Chang [2 ]
Gopinath, Subash C. B. [1 ,4 ]
Ying, Lim Bee [3 ]
Arshad, Mohd Khairuddin Mohd [1 ]
Loong, Foo Kai [1 ]
Hashim, Uda [1 ]
Rahim, Ruslinda A. [1 ]
Bin Nordin, Mohd Nasha Ain [5 ]
Parmin, Nor Azizah [1 ]
机构
[1] Univ Malaysia Perlis, INEE, Kangar 01000, Perlis Indera K, Malaysia
[2] Univ Malaysia Perlis, Sch Mfg Engn, Kampus Alam Pauh Putra, Arau 02600, Perlis Indera K, Malaysia
[3] Univ Malaysia Perlis, Sch Mat Engn, Arau 02600, Perlis Indera K, Malaysia
[4] Univ Malaysia Perlis, Sch Bioproc Engn, Arau 02600, Perlis Indera K, Malaysia
[5] Adv Mat Res Ctr, Kulim Hitech Pk, Kulim 09000, Kedah Darul Ama, Malaysia
来源
SAINS MALAYSIANA | 2017年 / 46卷 / 07期
关键词
Microwave processing; multi-walled carbon nanotube; silicon carbide nanotube; silicon dioxide; sintering; SIC NANOWIRES; POWDER;
D O I
10.17576/jsm-2017-4607-08
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In this article, the effect of heating duration on the synthesis of silicon carbide nanotubes (SiCNTs) was reported. SiCNTs were synthesized from blend of silicon dioxide (SiO2) and multi-walled carbon nanotubes (MWCNTs) in the ratio of 1: 3 by using the microwave heating at 1400 degrees C and maintained at duration of 20, 40 and 60 min, respectively. SiCNTs synthesized at heating duration of 40 and 60 min showed the presence of single phase beta-SiC in X-ray diffraction patterns. Meanwhile, field emission scanning electron microscope images showed that SiCNTs were formed and no residual of SiO2 and MWCNTs was observed for SiCNTs formed at heating duration of 40 and 60 min. Transmission electron microscopy images showed the SiCNTs have inter-planar spacing of 0.263 nm and tubular structure of nanotube were retained. The peak corresponded to beta-SiC was observed at wavelength of 465 nm from the photoluminescence spectroscopy and associated with energy band gap of 2.67 eV. Absorption bands of Si-C bond were detected at 806.23 cm(-1) from the Fourier transform infrared spectra. High purity SiCNTs was obtained at 40 and 60 min as indicated by low weight loss by thermo-gravimetric analysis. 40 min is the most suitable heating duration for the synthesis of single phase beta-SiCNTs.
引用
收藏
页码:1069 / 1074
页数:6
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