Experimental characterization of stiction due to charging in RF MEMS

被引：0
|
作者：
van Spengen, WM [1 ]
Puers, R [1 ]
Mertens, R [1 ]
De Wolf, I [1 ]
机构：
[1] IMEC VZW, B-3001 Louvain, Belgium
来源：
INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We show that the commonly quoted number of cycles to failure is not a good figure of merit for the reliability of RF MEMS capacitive switches suffering from charging induced stiction failures. We use data from a new tool for low-frequency RF MEMS capacitance measurements and interferometric optical inspection. The total time the device is actuated before it fails is a much better measure.
引用
收藏
页码：901 / 904
页数：4
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