Surface roughness and in-plane texturing in sputtered thin films

被引:24
|
作者
Whitacre, JF
Rek, ZU
Bilello, JC
Yalisove, SM
机构
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Stanford Univ, Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA
关键词
D O I
10.1063/1.368204
中图分类号
O59 [应用物理学];
学科分类号
摘要
Real surfaces are not flat on an atomic scale, Studying the effects of roughness on microstructural evolution is of relevance because films are sputtered onto nonideal surfaces in many applications. To this end, amorphous rough substrates of two different morphologies, either elongated mounds or facets, were fabricated. The microstructural development of films deposited onto these surfaces was examined. In particular, the development of a preferred crystallographic orientation in the plane of growth in 400 nm thick Mo films grown on the rough substrates was studied using scanning electron microscopy, transmission electron diffraction, and high resolution x-ray diffraction (using phi scans in the symmetric grazing incidence x-ray scattering geometry with a synchrotron light source). It was found that the degree of texturing was dependent upon the type of roughness and its orientation during deposition. By limiting the average oblique angle of incident adatom flux, rough surfaces slowed the development of in-plane texture. Comparison between experimental data and theoretical predictions showed that a recent analytical model is able to reasonably predict the degree of texturing in films grown onto these surfaces, (C) 1998 American Institute of Physics.
引用
收藏
页码:1346 / 1353
页数:8
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