Electronic subband structure in two-dimensional electron gases under intense laser radiations

被引：4
|
作者：
Xu, W [1 ]
Zhang, C [1 ]
机构：
[1] Univ Wollongong, Dept Engn Phys, Wollongong, NSW 2522, Australia
来源：
PHYSICA E | 1998年 / 2卷 / 1-4期
基金：
澳大利亚研究理事会;
关键词：
electronic subband structure; quantum well; modulation doping; terahertz radiation;
D O I：
10.1016/S1386-9477(98)00053-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present a theoretical study on the influence of intense terahertz (THz) electromagnetic (EM) radiations on the electronic structures in a modulation-doped two-dimensional (2D) semiconductor system. We find that in the presence of a THz EM radiation field polarised linearly along the 2D-plane of a 2D electron gas (2DEG), the electron density of states will be modified strongly by the intensity and the frequency of the radiation field. As a consequence, the Fermi-energy and the electron density in the system will be affected markedly by the EM radiations. The results have indicated that the photon modified electronic subband structure in a 2DEG device can be observed by using the recently developed free-electron laser sources. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：252 / 255
页数：4
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