Electronic subband structure in two-dimensional electron gases under intense laser radiations

被引：4

作者：

Xu, W ^{[1
]}

Zhang, C ^{[1
]}

机构：

[1] Univ Wollongong, Dept Engn Phys, Wollongong, NSW 2522, Australia

来源：

PHYSICA E | 1998年 / 2卷 / 1-4期

基金：

澳大利亚研究理事会;

关键词：

electronic subband structure; quantum well; modulation doping; terahertz radiation;

D O I：

10.1016/S1386-9477(98)00053-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a theoretical study on the influence of intense terahertz (THz) electromagnetic (EM) radiations on the electronic structures in a modulation-doped two-dimensional (2D) semiconductor system. We find that in the presence of a THz EM radiation field polarised linearly along the 2D-plane of a 2D electron gas (2DEG), the electron density of states will be modified strongly by the intensity and the frequency of the radiation field. As a consequence, the Fermi-energy and the electron density in the system will be affected markedly by the EM radiations. The results have indicated that the photon modified electronic subband structure in a 2DEG device can be observed by using the recently developed free-electron laser sources. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：252 / 255

页数：4

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