Intersubband photocurrent spectroscopy on self-assembled In(Ga)As/GaAs quantum dots

被引:0
|
作者
Chu, L [1 ]
Zrenner, A [1 ]
Bichler, M [1 ]
Böhm, G [1 ]
Abstreiter, G [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 224卷 / 02期
关键词
D O I
10.1002/1521-3951(200103)224:2<591::AID-PSSB591>3.3.CO;2-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on vertical and lateral intersubband photocurrent (PC) spectroscopy on self-assembled ln(Ga)As/GaAs quantum dots (QDs). Transitions from bound states in QDs to the GaAs continuum have been observed in vertical PC measurements. These transitions are nearly independent of polarization of the incident light. Transition from QD bound state to the wetting layer subband has been observed in lateral PC spectra. A fine structure of the first excited state in QD can be resolved with in-plane polarization dependent measurements. We present a consistent energy band diagram of self-assembled In(Ga)As/GaAs QDs by comparing photoluminescence and infrared photocurrent data.
引用
收藏
页码:591 / 594
页数:4
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