Chemical ordering of FePt films using millisecond flash-lamp annealing

被引：1

作者：

Brombacher, C. ^{[1
]}

Schubert, C. ^{[1
]}

Daniel, M. ^{[1
]}

Liebig, A. ^{[1
]}

Beddies, G. ^{[1
]}

Schumann, T. ^{[2
]}

Skorupa, W. ^{[2
]}

Donges, J. ^{[3
]}

Haeberlein, S. ^{[4
]}

Albrecht, M. ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

[2] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany

[3] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany

[4] FHR Anlagenbau GmbH, D-01458 Ottendorf Okrilla, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 02期

关键词：

THIN-FILMS; MAGNETS; RANGE;

D O I：

10.1063/1.3677991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and magnetic properties of 20-nm-thick FexPt100-x films that were processed by 20 ms flash-lamp annealing were investigated. A maximum in coercivity of (10.4 +/- 0.5) kOe was achieved for a composition of Fe53Pt47, which shows also a high degree of L1(0) chemical order. A variation of the chemical composition toward either higher or lower Fe content leads to a lowering of the coercivity, which can be attributed to a reduction in L1(0) ordered volume fraction. Thus, in the millisecond time regime, the fastest ordering transformation occurs for slightly Fe-rich FePt films. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677991]

引用

页数：4

共 50 条

[1] Millisecond flash-lamp annealing of LaLuO3
Lehmann, J.
Shevchenko, N.
Muecklich, A.
v. Borany, J.
Skorupa, W.
Schubert, J.
Lopes, J. M. J.
Mantl, S.
[J]. MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1346 - 1348
[2] Flash-lamp annealing of semiconductor materials - Applications and process models
McMahon, R. A.
Smith, M. P.
Seffen, K. A.
Voelskow, M.
Anwand, W.
Skorupa, W.
[J]. VACUUM, 2007, 81 (10) : 1301 - 1305
[3] Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing
Saxena, Saurabh
Kim, Dong Cheol
Park, Jeang Hun
Jang, Jin
[J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) : 1242 - 1244
[4] Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing
Choi, Jeong-Wan
Jin, Weon-Bum
Bae, Seung-Muk
You, Yil-Hwan
Kim, Hyoung-June
Kim, Byeong-Kook
Kwon, Yongwoo
Park, Seungho
Hwang, Jin-Ha
[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (11) : P391 - P395
[5] Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique
O'Connor, Eamon
Halter, Mattia
Eltes, Felix
Sousa, Marilyne
Kellock, Andrew
Abel, Stefan
Fompeyrine, Jean
[J]. APL MATERIALS, 2018, 6 (12):
[6] Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing
Prucnal, S.
Shumann, T.
Skorupa, W.
Abendroth, B.
Krockert, K.
Moeller, H. J.
[J]. ACTA PHYSICA POLONICA A, 2011, 120 (01) : 30 - 34
[7] Millisecond flash lamp annealing of shallow implanted layers in Ge
Wuendisch, C.
Posselt, M.
Schmidt, B.
Heera, V.
Schumann, T.
Muecklich, A.
Groetzschel, R.
Skorupa, W.
Clarysse, T.
Simoen, E.
Hortenbach, H.
[J]. APPLIED PHYSICS LETTERS, 2009, 95 (25)
[8] 10-15 nm ultrashallow junction formation by flash-lamp annealing
Ito, T
Iinuma, T
Murakoshi, A
Akutsu, H
Suguro, K
Arikado, T
Okumura, K
Yoshioka, M
Owada, T
Imaoka, Y
Murayama, H
Kusuda, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B): : 2394 - 2398
[9] FLASH-LAMP ANNEALING OF SI-SIO2 TRANSITION LAYER DEFECTS
LYSENKO, VS
ZIMENKO, VI
TYAGULSKII, IP
OSIYUK, IN
SNITKO, OV
SYTENKO, TN
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 87 (02): : K175 - K180
[10] RAMAN IMAGE STUDY OF FLASH-LAMP ANNEALING OF ION-IMPLANTED SILICON
MIZOGUCHI, K
HARIMA, H
NAKASHIMA, S
HARA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3388 - 3392

← 1 2 3 4 5 →