Excitons in semiconductor nanostructures

被引：0
|
作者：
Yartsev, VM
Singh, MR
Desforges, J
机构：
[1] Inst Venezolano Invest Cient, Ctr Fis, Caracas 1020A, Venezuela
[2] Univ Western Ontario, Ctr Chem Phys, London, ON N6A 3K7, Canada
来源：
REVISTA MEXICANA DE FISICA | 2003年 / 49卷
关键词：
excitons; nanostructures; disorder;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A formation of excitons is studied in semiconductor nanostructures where electrons and holes are spatially separated by a potential barrier. The disorder present within electron-hole interface is due to structural imperfections which are unavoidable in the course of fabrication. The exciton density is calculated as a function of the disorder and of the hopping integral value.
引用
收藏
页码：160 / 163
页数：4
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