(Zr, Sn)TiO4 thin films for application in electronics

被引：22
|
作者：
Nistor, M
Gherendi, F
Magureanu, M
Mandache, NB
Ioachim, A
Banciu, MG
Nedelcu, L
Popescu, M
Sava, F
Alexandru, HV
机构：
[1] Univ Bucharest, Fac Phys, Bucharest, Romania
[2] NILPRP, Bucharest, Romania
[3] Natl Inst Mat Phys, Bucharest, Romania
来源：
APPLIED SURFACE SCIENCE | 2005年 / 247卷 / 1-4期
关键词：
zirconium tin titanate; pulsed electron deposition; thin films;
D O I：
10.1016/j.apsusc.2005.01.124
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of zirconium tin titanate, (Zr0.8Sn0.2)TiO4 (ZST) were deposited using a pulsed electron beam source based on a channel-spark discharge for target ablation. An advanced degree of crystallization was obtained for the films deposited on alumina substrate post-annealed at 1000 degrees C. The crystalline lattice constants of the films are very close to those of the target material, which confirms the same stoichiometry in ZST films and in the bulk. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：169 / 174
页数：6
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