Preparation and properties of various orientation (Zr, Sn)TiO4 thin films

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作者：
Qiu, Ping-Sun [1 ]
Cheng, Wen-Xiu [1 ]
He, Xi-Yun [1 ]
Zheng, Xin-Sen [1 ]
Zeng, Xia [1 ]
Ding, Ai-Li [1 ]
机构：
[1] Shanghai Institute of Ceramics, Chinese Acad. of Sci., Shanghai 200050, China
来源：
Yadian Yu Shengguang/Piezoelectrics and Acoustooptics | 2008年 / 30卷 / SUPPL.期
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摘要：
(111) and (200) orientation (Zr0.8, Sn0.2)TiO4(ZST) thin films were grown on Pt/Ti/SiO2/Si(100) substrates by radio-frequency magnetron sputtering. The microstructure and the surface morphology of ZST thin film was studied by X-ray diffraction and atomic force microscopy. The dielectric properties of (111) orientation (Zr0.8, Sn0.2)TiO4(ZST) thin film were better than that of (200) orientation. The dielectric constant and dielectric loss of (111) and (200) orientation ZST thin films at 100 kHZ were 38 and 30, 0.0069 and 0.015 respectively.
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页码：20 / 22
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