A Single-Transistor Amplifier With Back-Gate Feedback in 22-nm FD-SOI

被引：3

作者：

Weinreich, Stephen ^{[1
]}

Murmann, Boris ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE SOLID-STATE CIRCUITS LETTERS | 2022年 / 5卷

关键词：

Back-Gate (BG); body bias; common-source amplifier; feedback; fully-depleted silicon-on-insulator (FD-SOI); inverter; linearization; mismatch;

D O I：

10.1109/LSSC.2022.3198547

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Fully-depleted silicon-on-insulator (FD-SOI) technology provides an additional degree of circuit design freedom due to its fourth terminal, the back-gate (BG). In this letter, we present a single-transistor common-source amplifier exploiting the FD-SOI BG as a feedback injection point. This negative BG feedback improves linearity and reduces device-to-device gain variation without increasing noise or power and with no added components. A prototype amplifier, implemented in 22-nm FD-SOI, operates from weak to moderate inversion and achieves 5-10 x lower gain variation and 6-20-dB higher VIP3 compared to a reference two-transistor amplifier with a diode-connected load.

引用

页码：210 / 213

页数：4

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