Some annealing effects in proton irradiated silicon detectors

被引：0
|
作者：
Pintilie, I [1 ]
Petris, M [1 ]
Tivarus, C [1 ]
Moll, M [1 ]
Fretwurst, E [1 ]
Lindstroem, G [1 ]
机构：
[1] Natl Inst Mat Phys, Bucharest, Romania
来源：
2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Annealing studies of a proton irradiated Si test diode (1MeV- neutron equivalent fluence is phi (eq) = 1.82x10(13) cm(-2)) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic features during the annealing treatment were investigated using Thermally Stimulated Current method.
引用
收藏
页码：259 / 262
页数：4
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