Resonant photoemission of rare earth doped GaN thin films

被引：5

作者：

McHale, S. R. ^{[1
]}

McClory, J. W. ^{[1
]}

Petrosky, J. C. ^{[1
]}

Wu, J. ^{[2
,3
]}

Palai, R. ^{[2
,3
]}

Losovyj, Ya B. ^{[4
]}

Dowben, P. A. ^{[5
]}

机构：

[1] USAF, Inst Technol, Wright Patterson AFB, OH 45433 USA

[2] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA

[3] Univ Puerto Rico, Inst Funct Nanomat, Rio Piedras, PR 00931 USA

[4] Louisiana State Univ, J Bennett Johnston Sr Ctr Adv Microstruct & Devic, Baton Rouge, LA 70806 USA

[5] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Dept Phys & Astron, Lincoln, NE 68588 USA

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2011年 / 56卷 / 01期

关键词：

3P PHOTOTHRESHOLD; SHAKE-UP; ERBIUM; YB; PHOTOLUMINESCENCE; SPECTROSCOPY; IRRADIATION; OVERLAYERS; EPITAXY; POWDERS;

D O I：

10.1051/epjap/2011110235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The 4d -> 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f(14) occupancy.

引用

页数：6

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