Photoluminescence in rare-earth-doped chalcogenide thin films

被引：0

作者：

Hamel, V ^{[1
]}

Fick, J ^{[1
]}

Villeneuve, A ^{[1
]}

Vallée, R ^{[1
]}

Knystautas, ÉJ ^{[1
]}

Schiettekatte, F ^{[1
]}

Roorda, S ^{[1
]}

Lopez, C ^{[1
]}

Richardson, KA ^{[1
]}

机构：

[1] Univ Laval, Ctr Opt Photon & Laser, Quebec City, PQ G1K 7P4, Canada

来源：

OPTICAL AMPLIFIERS AND THEIR APPLICATIONS, PROCEEDINGS | 2001年 / 44卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this project is to study the photoluminescence of diode pumped rare-earth-doped As2S3 and As24S38Se38 (ChG) glasses. Those devices might be very efficient for light amplification between 1300 and 1500 nm because of their low phonon energy. The thin films were deposited by thermal evaporation on SiO2/Si wafers and then doped by ion implantation. Doped bulk glasses have also been fabricated.

引用

页码：88 / 92

页数：5

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