Thermoelectric properties of n-type Mg2Si0.6-ySbySn0.4 compounds

被引:34
|
作者
Zhang, Q. [1 ]
Yin, H. [1 ]
Zhao, X. B. [1 ]
He, J. [2 ]
Ji, X. H. [2 ]
Zhu, T. J. [1 ]
Tritt, T. M. [2 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
关键词
D O I
10.1002/pssa.200723497
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The thermoelectric properties of n-type Mg2Si0.6-ySbySn0.4 solid solutions with a small Sb-doping ratio on the Si-site (y = 0.0-0.015) were prepared by an induction melting/hot-pressing method. The electrical conductivity, Seebeck coefficient and thermal conductivity have been measured as a function of temperature from 300 K to 820 K. A power factor similar to 2.28 x 10(-3) Wm(-1)K(-2) at 574 K for y = 0.01, and a dimensionless figure of merit ZT similar to 0.68 at 724 K for y = 0.005 are attained. Given the potential of these materials for utilization in thermoelectric devices in a medium temperature range, the thermoelectric compatibility of Mg2Si0.6-ySbySn0.4 samples has been also addressed.
引用
收藏
页码:1657 / 1661
页数:5
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